In this paper, W-band (75-110GHz) resistive mixer is designed using 0.15μm GaAs pseudo-morphic high electron mobility transistor (pHEMT) process. In order to achieve wideband performance, the transistor size and bias conditions are carefully determined so that the transistor presents around 50Ω at IF. In addition, coupled-line RF filter with a ring-resonator is utilized to provide broadband RF matching and IF open circuit which also improves the bandwidth performance. The designed resistive mixer was fabricated and measured at W-band, which shows a good agreement with the simulations.

resistive mixer, MMIC design, RFIC design.