As Pt atoms may create problem into the surface and junction of the power device, the paper investigates the effect of Pt atoms in thermal annealing (TA) process for various temperature environments. Though experiments, the comparison between un-doped and Pt-doped results for 850^°C and 900^°C has been made. As per results obtained Pt atoms can be deeply diffused to the silicon bulk after the TA 2 process. While before this process, the Pt diffusion range was recorded to be 4,500A. It was found that there was no significant change in C-V characteristics of Pt-doped, when the Vbi of 0.4-0.5eV got achieved. Thus, the Pt atoms contact type is not changed and the carrier concentration is confirmed due to effect that Pt may induce trap or cluster that can reduce the power device carrier concentration.

thermal annealing, trap, power device, semiconductor, electronics.