Current-voltage (I-V) characteristics of simple analytical calculation model of ferroelectric Ba_0.5Sr_0.5TiO₃-based diode have been verified with experimental data for bias voltage in the range of –10V to 10V. Ba_0.5Sr_0.5TiO₃ ferroelectrics layer used in the experiment was doped by varied Nb doping level. The simple analytical model used based on Shockley ideal diode model, while the experiment used simple I-V meter for the current measurement. The verification results show that the values of calculation current are similar to that of experimental data for low bias voltage. However, for higher bias voltage, the values tend to be slightly different with the experimental data.

Al/Ba_0.5Sr_0.5TiO₃/Al structure diode, I-V characteristics, simple analytical calculation model, I-V meter.