Thin films of  were prepared using thermal evaporation technique on carbon as a new design memory device. X-ray pattern showed that  is amorphous material with very small intensity peaks corresponding to  phase. Both the device resistance and its current-voltage under different temperature were measured. The conduction activation energy  was calculated from the temperature dependence of the device resistance. The static I-V characteristic curves of  diode showed a typical memory switching behavior. The mean values of threshold voltage  and the threshold electrical field  were decreased exponentially with increasing temperature. The value of switching activation energy ewas calculated. The obtained value of this ratio  equals to 2.046 supporting the thermal model for describing the switching mechanism inside  memory diode.  is a good candidate for a simple memory device.

 thin films, memory device, effect of temperature, electrical activation energy, memory switching, thermal model.