Thin films of  have been fabricated by the direct electron beam gun evaporation technique, in an oxygen atmosphere. The capacitance of  MIM structure of thickness 666nm was determined. thin film capacitors were studied at the temperature range (303-503K) and in the frequency range (100Hz-100kHz). Both of the measured capacitance and dissipation factor  showed a pronounced dependence at the higher temperatures and lower frequencies. Goswami and Goswami (G-G) model was used to interpret the predicted characterization features of the measured capacitors and the dissipation factor as a function of temperature and frequency. The frequency dependence of the dissipation factor  at different temperatures shows a relaxation process. The results of the relative capacitance suggested the temperature and frequency dependencies. MIM of is a good candidate for the dielectric capacitors for DRAM applications.

 electron beam gun, MIM capacitors, capacitance and dissipation factor, effect of temperature and frequency, Goswami and Goswami model, relaxation process.