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Volume 28 (2024)
Volume 28,
Pg 1 - 28 (December 2024)
Volume 27 (2023)
Volume 27,
Pg 1 - 76 (December 2023)
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Volume 26,
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Far East Journal of Electronics and Communications
Far East Journal of Electronics and Communications
Volume 2, Issue 2, Pages 171 - 186 (August 2008)
A TECHNIQUE TO IMPROVE LINEARITY OF A BIAS-OFFSET TRANSCONDUCTOR OPTIMIZING ASPECT RATIO OF TRANSISTORS
Fujihiko Matsumoto (Japan), Isamu Yamaguchi (Japan) and Yasuaki Noguchi (Japan)
Abstract:
A bias-offset transconductor is generally known as a linear MOS transconductor. In practice, however, the transfer characteristic exhibits nonlinearity due to mobility degradation from the vertical electric field. This paper proposes a new technique to improve the linearity of the bias-offset transconductor. The improvement is achieved by optimizing the aspect ratio of the transistors to cancel the effect of mobility degradation. A calculation method to obtain optimum parameter values without using maximally flat approximation, which is a generally known method, is also presented. The results of SPICE simulation show that the transconductance error of the proposed technique becomes less than 0.2%, while that of the conventional design becomes less than 16% under the condition that mobility degradation factor is about 0.1. Even, if the tail current is changed, the transconductance error hardly becomes large.
Keywords and phrases:
MOSFET, linear transconductor, analogue integrated circuit, CMOS circuits.
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P-ISSN: 0973-7006
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