In computation systems, eighty-five to ninety per cent of chip area is occupied by the storage area. The most significant conventional MOSFET technology is affected by short channel effects at nano-level of scaling paradigm. To achieve substantial density, minimal electrical consumption and as a consequence speedy operation the memristor-based memory is prominent nowadays. In this paper, we have a tendency to introduce memristor depended structured hybrid non-volatile memory. In this paper, we analysed the read/write techniques of hybrid non-volatile memory as well as power consumption by exploitation macroscopic threshold model of a memristor with the help of CNTFET based ambipolar FET.

ambipolar FET, memristor, non-volatile, read/write, CNTFET.