The working process of a MOSFET includes the tunneling. This becomes an important feature for the nano-scaled devices. In this work, the focus is on the performance of nanoscale cylindrical surrounding double-gate (CSDG) MOSFET, which is also a good device for the scaling, with the emphasis on tunneling. In this work, a mathematical modeling of tunneling is performed. The model is physics-based and valid in all the operating regimes of traditional MOSFET. This CSDG MOSFET is suitable for RF switches.

boundary condition, tunneling, cylindrical surrounding double-gate MOSFET, nanotechnology, VLSI.