A new design technique for high gain and low noise for 2.45GHz low noise amplifier is reported in this study. It consists of the use of diode connected PMOS transistor in the input instead of a resistor to obtain a good impedance matching with low noise figure and small area. This technique is studied theoretically and through simulation to be validated. The LNA operates at 1.8V. Its bandwidth is between 2.05 and 2.7GHz. It achieves at 2.45GHz frequency high voltage gain about 24.634dB with 0.98dB noise figure.

high gain, low noise amplifier, good matching.