To overcome the disadvantages of power consumption and area in static RAM based retention flip-flop (SRFF), the memristor based retention flip-flop (MRFF) has been proposed. The proposed MRFF exploits the advantages of hybrid property of both metal oxide semi-conductor (MOS) and memristor. The logic states are retained by the non-volatile property of the memristor. The memristor based SRAM cell is embedded in the SRAM part of the SRFF to overcome the drawbacks of SRFF. The results show that the total area and power are reduced considerably.

memristor, SRAM retention flip-flop (SRFF), memristor retention flip-flop (MRFF).