This paper presents the effect of radiation on the resistance of P-N diode at room temperature. The resistance of the device receives the effect from radiation, and therefore we investigate it by separating parts of the device such as metal layer, doping layer and silicon wafer. The device is exposed by X-ray radiation at 55keV, 1min (15sec per step). The results show that forward current and sheet resistance characteristics perform better than before exposed. Optimized radiation energy and time (dose) may help to reduce some defect from the process and wafer growth.

diode, P-N junction diode, semiconductor, radiation exposure, sheet resistance.