[1]    B. Himanshu, G. Mayank and M. J. Kumar, Analytical drain current model for nanoscale strained-Si/SiGe MOSFETs, Inter. J. Comput. Math. Electric. Electron. Eng. 28(2) (2009), 353-371.

[2]    A. Kah-Wee, L. Jianqiang, T. Chih-Hang, B. Narayanan, S. S. Ganesh and Y. Yee-Chia, Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance, IEEE Trans. Electron Devices 55(3) (2008), 850-857.

[3]    C. Karthik, Z. Xing, B. C. Siau, S. Wangzuo and H. S. Guan, Physics-based single-piece charge model for strained-Si MOSFETs, IEEE Trans. Electron Devices 52(7) (2005), 1555-1562.

[4]    D. B. M. Klaassem, Unified mobility model for device simulation I. Model Equations and Concentrations Dependence, Solid-State Electronics 52(7) (1992), 953-959.

[5]    R. Kern, L. H. Judy and F. G. James, Fabrication and analysis of deep submicron strained-Si n-MOSFETs, IEEE Trans. Electron Devices 47(7) (2000), 1406-1414.

[6]    S. Latreche and C. Gontrand, Modelisation de la conduction dans la diode emetteur - base d’un transistor bipolaire compatible CMOS, IEEE Physical Status Solidi. sol (b) (1999), 203-215.

[7]    W.-C. Liang, Y.-J. Wu, K. Hennacy, S. Singh, N. Goldsman and I. Mayergoyz, 2-D MOSFET simulation by self-consistent solution of the Boltzmann and Poisson equations using a generalized spherical harmonic expansion, Simulation of Semiconductor Devices and Processes 6 (1995), 122-125.

[8]    A. Majorana and R. M. Pidatella, A finite difference scheme solving the Boltzmann Poisson system for semiconductor devices, J. Comp. Phys. 174(2) (2001), 649-668.

[9]    C. L. R. Milazzo, Finite difference scheme for semiconductor Boltzmann equation with nonlinear collision operator, Appl. Math. Sci. 7(15) (2013), 735-750.

[10]    S. Neha and K. R. Ashwani, Impact of strain and channel thickness on performance of biaxial strained silicon MOSFETs, Inter. J. VLSI Design Commun. Sys. (VLSICS) 2(1) (2011), 61-71.

[11]    C. Ren-Chuen and L. Jinn-Liang, Iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices, Solid of Computational Physics 189 (2003), 579-606.

[12]    M. Reiche, O. Moutanabbir, J. Hoentschel, U. Gsele, S. Flachowsky and M. Horstmann, Strained silicon devices, Solid State Phenomena 156-158 (2010), 61-68.

[13]    B. R. Shiromani and J. Garima, A physics based model of inversion charge sheet (ICS) for nanoscale biaxial strained silicon nMOSFET including quantum mechanical effect (QME), Inter. J. Adv. Eng. Tech. 5(2) (2013), 155-161.

[14]    H. O. Sarah, G. O. Anthony, S. D. Luke, S. K. K. Kelvin, C. Sanatan, M. W. Andrew, T. T. Yue, G. R. E. Alan, J. N. David and G. C. Anthony, High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture, IEEE Trans. Electron Devices 50(9) (2003), 1961-1969.