A chemical vapor deposition method was investigated for the growth of gallium nitride (GaN) films by catalytic reaction on ruthenium (Ru) nanoparticles. The GaN films were grown on c-plane sapphire substrates by the reaction of trimethylgallium with a high-temperature nitrogen precursor generated by catalytic reaction. The X-ray diffraction pattern for the GaN film grown at 600°C had an intense (0002) peak associated with GaN (0001) planes. Although the yellow luminescence intensity was strong, a sharp band-edge emission was observed.

GaN, catalytic reaction, Ru nanoparticle.