Ni-Cr-Si and Ni-Cr-Si-Al resistive films were prepared on glass and Al₂O₃ substrates by DC magnetron sputtering from casting alloy targets of Ni_0.35-Cr_0.25-Si_0.4 and Ni_0.35-Cr_0.25-Si_0.2-Al_0.2, respectively. The microstructural evolution of both films was comparatively investigated using X-ray diffraction and transmission electron microscopy (TEM). The results showed that the two types of films exhibited different crystallization behaviors. When the annealing temperature was set to 300°C, an amorphous structure was observed. When the annealing temperature was higher than 500°C, the Ni-Cr-Si films crystallized into Ni and Cr₂O₃ phases. However, the Ni-Cr-Si-Al films exhibited an amorphous structure for annealing temperatures of up to 600°C. Changes in the electrical characteristics of the films, such as the resistivity and temperature coefficient of resistance (TCR), in relation to the microstructural transformations are also discussed.

Ni-Cr-Si-based thin film resistors, resistivity, DC magnetron sputtering, annealing.