In this paper, we consider the finite difference method to demonstrate the enhancement obtained by applying mechanical strain in MOS channels, in the drive current. The aim of our work is to simulate numerically the SiGe LDD nMOSFET (metal oxide semi conductor field effect transistor) using two dimensional drift diffusion model (DDM). The PDE considered equations are then decoupled with the Gummel’s method. The system of equations obtained is then discretized using finite difference method. We consider the Gauss Seidel’s method and matrix algebra for solving the linearized discrete equations. Simulation results obtained in this study show excellent agreement with those realized by commercial simulator (ISE-TCAD).

SiGe nMOSFET, finite difference mesh, drift diffusion model (DDM), 2D simulation.