In this paper, the distance effects between a hot wire and a Si substrate in the hot wire chemical vapor deposition (HWCVD) method have been investigated. The Si substrate has been placed in the HWCVD reactor in order the distance between the substrate and the hot wire was from 0.5 cm up to 1.58 cm. There were some stereo sunflower like patterns on the surface of the prepared DLC thin films which have been investigated by back-scattering micro Raman spectroscopy and SEM imaging. It became clear that these flower like patterns formed due to the stress existence in the DLC thin films. Our results indicate that the stress amount significantly depends on the distance of the hot wire and the silicon substrate.