Abstract: Theoretical study is made to calculate the band offset
of pseudomorphically strained interface. Therefore on the basis
of model ‘solid theory’, the strain effects electrons, heavy holes (hh) and
light holes (lh) are investigated as a function of sulphur composition x
ranging from 0 to 1 with and without taken into account the effect of an applied
magnetic field. In the frame of a mean field approximation, main peculiar
feature is revealed indicates that heterostructure allows a direct
interband transition for the carriers for molar fraction x
ranging between 0 and 4%. Over this range of sulphur content, the heterostructure is of type II band
alignment. Our result provides useful information for experimentalists and opens
the way to realise devices based on structures for
Keywords and phrases: band offset, diluted magnetic heterostructure ZnMnSe/ZnSSe.
