Recently, organic-inorganic mixed halide perovskite (MAPbX₃; MA = CH₃NH₃, X =Cl⁻, Br⁻, or 1⁻) hybrid MAPbBr₃ perovskite are promising material for the new generation of solar cells. They have gained substantial attention because of their high efficiency, low cost and superior optical properties. They have reached power conversion efficiencies of over 22%, and perovskite light-emitting diodes have recently achieved over 11% external quantum efficiency. Usually the optical and structural properties of  CH₃NH₃PbBr₃ can be adjusted  by changing the anions such as Cl⁻, Br⁻ and I⁻ . In this work, perovskite layer was prepared by a simple and rapid method. Instead of replacing halogens I, Br or Cl as usual, we preferred to act on post-transition metal (Pb). To this end, we replaced lead with Indium (In). Films were deposited on FTO (Fluorine Doped Tin Oxide) coated glass substrate. They were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The X-ray diffraction (XRD) patterns of all samples demonstrated a pure perovskite phase. Deposited films showed also a strong absorbance in the UV-vis. The band gap values were estimated between 1.60 and 1.80eV range.

thin film perovskites, spin coating, bulk crystal growth,  MAPbBr₃, MAPb_1-xIn_xBr₃.