To enhance optical emission from quantum dots, photonic crystal cavities were fabricated in a silicon-on-insulator (SOI) substrate using electron beam lithography and dry etching. Using these techniques, photonic crystal cavity sets in which the air hole diameters ranged from 200 to 240nm were produced. Quantum dots trapped in these cavities, having various air hole diameters, exhibited increased emission. A single, sharp emission peak was obtained from a photonic crystal cavity set with an air hole diameter of 220 nm.

photonic crystal cavity, SOI, quantum dot.